1.Good chip with good effect of receiving and high sensitivity
2.Reverse dark current above 2mA
3.Used in Infrared Applied Sys
Detailed introduction to Photo Transistor:
DESCRIPTIO
1) AT405-PT-02F is a high speed and high sensitive silicon NPN phototransistor with exceptionally stable characteristics and high illumination sensitivity.
2) Mounted in 5mm diameter black epoxy package.
FEATURES
1) Fast Response Time.
2) High Photo Sensitivity.
3) Visible Light Cut-Off Type.
4) Lead Free product, in compliance with RoHS.
APPLICATIONS
1) Infrared Applied System.
2) Floppy Disk Drive.
3) Opto-Electronic Switch.
TYPICAL ELECTRICAL & OPTICAL CHARACTERISTICS(ta=25°C)
Parameter | Symbol | Min. | Type | Max. | Unit | Test Condition |
Collector-Emitter Breakdown Voltage
| V(BR)CEO | 30 |
|
| V | Ic=100µa ee=0mw/cm2 |
Emitter-Collector Breakdown Voltage | V(BR)ECO | 5 |
|
| V | ie=100µa ee=0mw/cm2 |
Collector-Emitter Saturation Voltage
| VCE(sat) |
|
| 0.2 | V | ic=2ma ib=100µa |
Rise Time
| Tr |
| 5 |
| µS | vce=5v ic=1mA rl=1000Ω |
Fall Time
| Tf |
| 5 |
| µs | |
Collector Dark Current
| ICEO |
|
| 100 | na | vce=10v ee=0mw/cm2 |
On State Collector Current | IC(on) | 1.8 | 3 |
| mA | 5v ee=1mw/cm2 λp=940nm |
Peak Wavelength of Sensitive | λp |
| 940 |
| nm |
|